SIMS

IMS Wf 및 SC Ultra

2d and 3D imaging in seminconductor with IMS Wf and Winimage

첨단 반도체 애플리케이션을 위한 SIMS MS Wf 및 SC Ultra는 첨단 반도체에서의 dynamic SIMS 측정에 대한 니즈 증가를 충족시키기 위해 특수 설계되었습니다. 질량 분해능과 일차 이온빔 밀도의 손상 없이 광범위한 충격 에너지(100eV ~ 10keV)를 제공하여 다음과 같은 매우 까다로운 작업에서도 대량 고속 분석 중에도 비교할 수 없는 분석 성능을 보장합니다. 저에너지와 고에너지 주입, 초박형 질화 산화막, high-k metal gates, SiGe 도핑층, Si:C:P 구조, PV 및 LED 장치, 그래핀 등

제품 개요 +

표준 깊이방향 프로파일링에서 매우 얇은 깊이방향 프로파일링까지
첨단 반도체 분석에 대한 첫 번째 필수 조건은 표준 깊이방향 프로파일링 작업을 포기하지 않은 상태에서 매우 얇은 깊이방향 프로파일링을 위한 SIMS 분석 조건을 최적화하는 것입니다. 따라서 CAMECA는 두꺼운 구조를 위한 고에너지(keV 범위)에서 매우 얇은 구조를 위한 저에너지(≤ 150eV)에 이르는 광범위한 충격 에너지로 시료를 스퍼터링할 수 있는 우수한 SIMS 장비 디자인을 개발했습니다. 유연하게 선택할 수 있는 충격 에너지로 제어된 다양한 스퍼터링 조건(종, 입사각 등)에서 사용할 수 있습니다.

CAMECA IMS Wf 및 SC Ultra는 고질량 분해능과 높은 투과율을 유지하면서 매우 낮은 충격 에너지(EXLIE) 기능을 제공하는 유일한 SIMS 장비입니다.

우수한 자동화 레벨
SIMS 기술이 발전함에 따라 사용자들은 높은 재현성과 고정밀 측정을 달성하는 데 필요한 전문 지식을 줄이고자 합니다. 이러한 추세는 명백하게 무인 자동 분석을 추구하고 있습니다. CAMECA IMS Wf 및 SC Ultra는 모든 분석 매개변수(분석 레시피, 장비 셋업 등)를 완전하게 제어할 수 있는 컴퓨터 자동화를 통해 이러한 도전에 대응하고 있습니다.

에어록 시스템, 시료 스테이지 및 분석 챔버는 300mm(IMS Wf 모델) 까지의 웨이퍼를 수용하고 하나의 홀더에 많은 수의 시료를 로드하도록 최적화되었습니다. 에어록과 분석 챔버 사이의 이송이 완전 전동화된 IMS Wf 모델에는 최대 100개의 시료를 로드할 수 있습니다.

높은 수준의 자동화로 IMS Wf 및 SC Ultra는 최적화된 시료 처리량과 탁월한 측정 안정성으로 깊은 깊이방향 프로파일링을 빠르게 수행하며 사상 초유의 SIMS 장비 생산성을 보장합니다.

웨비나 보기 +
- Secondary Ion Mass Spectrometry Measurements with a Large Scale-to-Resolution Ratio
  
  목요일, 11월 28, 2024
  
  This webinar presented by Paweł Michałowski from Łukasiewicz - IMiF, is only available on demand. Please fill in the contact form under CONTACT -> CONTACT US to request the link.
  Click here to view
- Dynamic SIMS for Semiconductors
  
  목요일, 9월 16, 2021
  
  A review of a broad array of IC applications with Dynamic SIMS, from deep to ultra-shallow implant depth profiling in Si-based semiconductors to compositional analysis of thin multilayers in patterned wafer pads, optoelectronics, 2D and non-planar 3D structures. Speaker: Pawel Michałowski, expert-user of CAMECA SC Ultra SIMS at Łukasiewicz Research Network – Institute of Microelectronics and Photonics, Poland
  ↓ Duration : 20 minutes
  
  Click here to view
- Secondary Ion Mass Spectrometry Characterization of MAX and MXene Samples
  
  화요일, 12월 13, 2022
  
  Learn with Dr. Paweł P. Michałowski why novel ultrathin 2D materials are so attractive for applications ranging from energy storage to electronics and medicine, how compositional variability and the interaction of surface termination layers affect fine-tuning of MAX and MAXenes properties and how ultra-low energy Secondary Ion Mass Spectrometry can facilitate further development of MAX and MXenes.
  ↓ Duration: 48 minutes
  
  Click here to view

IMS Wf 및 SC Ultra 기능 알아보기 +
- 매우 낮은 임플란트 측정(EXLIE SIMS)
  
  EXtreme Low Impact Energy SIMS 장비는 도펀트의 심층 분포 모니터링에 사용됩니다.
  
  Keep Reading

자료 +
- Brochure - IMS Wf and SC Ultra
- Application - Thin Film Metrology and Ultra Shallow Implant Process Control
- Application - Boron Implant Characterization: Advantage of EXLIE SIMS over PCOR

과학 간행물 +

아래는 CAMECA IMS Wf 및 SC Ultra 사용자들의 연구 논문 중 일부입니다.

IMS Wf 및 SC Ultra 데이터를 사용한 과학 연구 논문을 정리한 PDF 스프레드시트를 다운로드할 수 있습니다.
다운로드
누락된 참고 문헌, PDF 및 보충 자료를 보내주시기 바랍니다!
이메일 cameca.info@ametek.com 으로 보내주세요.

Solid-phase epitaxial regrowth of phosphorus-doped silicon by nanosecond laser annealing. S. Kerdil`es, M. Opprecht, D. Bosch, M. Ribotta, B. Skl´enard, L. Brunet, P.P. Michalowski. Materials Science in Semiconductor Processing Volume 186, February (2025), 109043.
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Ultralow impact energy dynamic secondary ion mass spectrometry with nonfully oxidizing surface conditions. A. Merkulov. J. Vac. Sci. Technol. B 42, 064005 (2025)

Fabrication and Characterization of Boron‑Implanted Silicon Superconducting Thin Films on SOI Substrates for Low‑Temperature Detectors. A. Aliane · L. Dussopt · S. Kerdilès · H. Kaya · P. Acosta‑Alba · N. Bernier ·A.‑M. Papon · E. Martinez · M. Veillerot · F. Lefloch. Journal of Low Temperature Physics (2024)
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MXenes with ordered triatomic-layer borate polyanion terminations. Dongqi Li, Wenhao Zheng, Sai Manoj Gali, Kamil Sobczak, Michal Horák, Josef Polčá, Nikolaj Lopatik, Zichao Li, Jiaxu Zhang, Davood Sabaghi, Shengqiang Zhou, Paweł P. Michałowski, Ehrenfried Zschech, Eike Brunner, Mikołaj Donten, Tomáš Šikola, Mischa Bonn, Hai I. Wang, David Beljonne, Minghao Yu, Xinliang Feng. ChemRxiv (2024)
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Deep-level defects induced by implantations of Si and Mg ions into undoped epitaxial GaN. Paweł Kamiński, Andrzej Turos, Roman Kozłowski, Kamila Stefańska-Skrobas, Jarosław Żelazko, and Ewa Grzanka. Sci Rep. (2024); 14: 14272
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Fabrication and Performance Evaluation of a Nanostructured ZnO-Based Solid-State Electrochromic Device. Marivone Gusatti, Daniel Aragão Ribeiro de Souza, Mario Barozzi, Rossana Dell’Anna, Elena Missale, Lia Vanzetti, Massimo Bersani, and Marcelo Nalin. ACS Appl. Mater. Interfaces (2024)
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Advanced SiGe: B Raised Sources and Drains for p-type FD-SOI MOSFETs. Jean-Michel Hartmann, Francois Aussenac, Olivier Glorieux, David Cooper, Sebastien Kerdilès, Zdenek Chalupa, Francois Boulard, Heimanu Niebojewski, Blandine Duriez, Thomas Bordignon, Sebastien Peru, Pawel Michałowski, Richard Daubriac, Fuccio Cristiano. ECS Transactions 114(2),185 (2024)
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Secondary ion mass spectrometry quantification of boron distribution in an array of silicon nanowires. Paweł Piotr Michałowski, Jonas Müller, Chiara Rossi, Alexander Burenkov, Eberhard Bär, Guilhem Larrieu, Peter Pichler. Measurement 211, 112630 (2023)
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Oxycarbide MXenes and MAX phases identification using monoatomic layer-by-layer analysis with ultralow-energy secondary-ion mass spectrometry. Paweł Piotr Michałowski, Mark Anayee, Tyler S Mathis, Sylwia Kozdra, Adrianna Wójcik, Kanit Hantanasirisakul, Iwona Jóźwik, Anna Piątkowska, Małgorzata Możdżonek, Agnieszka Malinowska, Ryszard Diduszko, Edyta Wierzbicka, Yury Gogotsi. Nature Nanotechnology 17, 1192-1197 (2022)
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Titanium pre-sputtering for an enhanced secondary ion mass spectrometry analysis of atmospheric gas elements. Paweł Piotr Michałowski. Journal of Analytical Atomic Spectrometry 35, 1047 (2020).
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Growth and thermal annealing for acceptor activation of p-type (Al)GaN epitaxial structures: Technological challenges and risks. Sebastian Złotnik, Jakub Sitek, Krzysztof Rosiński, Paweł Piotr Michałowski, Jarosław Gaca, Marek Wójcik, Mariusz Rudziński. Applied Surface Science 488, 688-695 (2019).
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Sodium enhances indium-gallium interdiffusion in copper indium gallium diselenide photovoltaic absorbers. D. Colombara, F. Werner, T. Schwarz, I. Cañero Infante, Y. Fleming, N. Valle, C. Spindler, E. Vacchieri, G. Rey, M. Guennou, M. Bouttemy, A. Garzón Manjón, I. Peral Alonso, M. Melchiorre, B. El Adib, B. Gault, D. Raabe, Phillip J. Dale & S. Siebentritt. Nature Communications volume 9, Article number: 826 (2018).
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Reproducibility of implanted dosage measurement with CAMECA Wf. Kian Kok Ong, Yun Wang and Zhiqiang Mo. IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (2017).
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Secondary ion mass spectroscopy depth profiling of hydrogen-intercalated graphene on SiC. Pawel Piotr Michalowski, Wawrzyniec Kaszub, Alexandre Merkulov and Wlodek Strupinski. Appl. Phys. Lett. 109, 011904 (2016).
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SIMS depth profiling and topography studies of repetitive III–V trenches under low energy oxygen ion beam sputtering. Viktoriia Gorbenko, Franck Bassani, Alexandre Merkulov, Thierry Baron, Mickael Martin, Sylvain David and Jean-Paul Barnes. J. Vac. Sci. Technol. B 34, 03H131 (2016).
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Ion beam characterizations of plasma immersion ion implants for advanced nanoelectronic applications. M. Veillerot, F. Mazen, N. Payen, J.P. Barnes, F. Pierre (2014), SIMS Europe 2014, September 7-9, 2014.

Influence of Temperature on Oxidation Mechanisms of Fiber-Textured AlTiTaN Coatings. V. Khetan, N. Valle, D. Duday, C. Michotte, M-P Delplancke-Ogletree, and P. Choquet. ACS Appl. Mater. Interfaces (2014), 6, 6, 4115–4125.
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Ag-Organic Layered Samples for Optoelectronic Applications: Interface Width and Roughening Using a 500 eV Cs+ Probe in Dynamic Secondary Ion Mass Spectrometry. P. Philipp, Quyen K. Ngo, M. Shtein, J. Kieffer, and T. Wirtz. Anal. Chem. 2013, 85, 1, 381–388.
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Sputtering behavior and evolution of depth resolution upon low energy ion irradiation of GaAs. M.J.P. Hopstaken, M.S. Gordon, D. Pfeiffer, D.K. Sadana, T. Topuria, P.M. Rice, C. Gerl, M. Richter, C. Marchiori. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. Volume 28, Issue 6, 1287, 18 November 2010

Advanced SIMS quantification in the first few nm of B, P, and As Ultra Shallow Implants. A.Merkulov, P.Peres, J.Choi, F.Horreard, H-U.Ehrke, N. Loibl, M.Schuhmacher, Journal of Vacuum Science & Technology B. 28, C1C48 (2010) ; doi:10.1116/1.3225588

Depth profiling of ultra-thin oxynitride date dielectrics by using MCs2+ technique. D.Gui, Z.X.Xing, Y.H.Huang, Z.Q.Mo, Y.N.Hua, S.P.Zhao and L.Z.Cha (2008), App. Surf. Science, Volume 255, Issue 4, Pages 1437-1439. doi:10.1016/j.apsusc.2008.06.047.

Short-term and long-term RSF repeatability for CAMECA SC Ultra SIMS measurements. M. Barozzi, D. Giubertoni, M. Anderle and M. Bersani. App. Surf. Science 231-232 (2004) 768-771

Toward accurate in-depth profiling of As and P ultra-shallow implants by SIMS. A. Merkulov, E. de Chambost, M. Schuhmacher and P. Peres. Oral presentation at SIMS XIV, San Diego, USA, Sep. 2003. Applied Surface Science 231–232 (2004) 640–644

Latest developments for the CAMECA ULE-SIMS instruments: IMS Wf and SC Ultra. E. de Chambost, A. Merkulov, P. Peres, B. Rasser, M. Schuhmacher. Poster for SIMS XIV, San Diego, USA, Sept 2003. Applied Surface Science 231–232 (2004) 949–953
일부 사용자 +

아래는 IMS Wf 및 SC Ultra 사용자 중 일부입니다. 반도체 업계의 많은 관계자들은 기밀 유지를 원하고 있어 여기에 소개할 수 없습니다.

Łukasiewicz Research Network - Institute of Microelectronics and Photonics, Poland
The research team under leadership of Pawel Piotr Michalowski at Łukasiewicz - Institute of Microelectronics and Photonics uses an SC Ultra to analyze ultra-thin and 2D materials as well as full device structures. Numerous publications have been released on a wide spectrum of topics ranging from graphene and quantum cascade layers to solid polymer electronics for energy storage. Dr Michałowski also worked on analyzing doping uniformity in semiconductor materials like p-type InAs grown on GaAs. Using the CAMECA SC Ultra, he achieved depth resolution below 1 nm, which is critical for understanding the distribution of dopants in semiconductor layers.

ITC-irst (Fondazione Bruno Kessler), divisione FSC, Italy
The FSC division led by Mariano Anderle develops and applies new surface analytical methodologies on last generation microelectronic devices and materials. It is involved in long term collaborations with several leading microelectronics companies. Masterpiece of the Materials and Analysis for Micro-Electronics lab under the direction of Massimo Bersani is a CAMECA IMS SC Ultra.

CNT, Fraunhofer-Center Nanoelektronische Technologien, Dresden, Germany
This public-private partnership between the Fraunhofer Gesellschaft and leading semiconductor manufacturers aims at developing new process technologies for nanoelectronics. It is equiped with state-of the-art instruments for materials charactrization, among which a CAMECA IMS Wf.

Science and Analysis of Materials (SAM), Luxemburg
A departement of Gabriel Lippmann public research center, SAM started its activities in 1992. Both a fundamental and applied research facility as well as an analytical service laboratory, it provides assistance to more than 100 industrial and academic partners worldwide. It is equipped with a CAMECA SC Ultra and a NanoSIMS 50.

소프트웨어 +
- SmartPRO
  
  The new SmartPRO software package for CAMECA IMS 7f-Auto, IMS Wf and SC Ultra Secondary Ion Mass Spectrometers combines Chain Analysis and WinCurve in a seamlessly integrated environment and adds real time data processing and automation functionalities thus improving ease of use, productivity and data quality.
  
  Keep Reading
- WinCurve
  
  CAMECA SIMS 장비용으로 특별히 개발된 WinCurve는 사용자 친화적인 환경에서 강력한 데이터 처리 및 시각화 기능을 제공합니다.
  
  Keep Reading
- WinImage II
  
  CAMECA SIMS 기비용으로 특별히 개발된 WinImage II는 PC-Windows™ 환경에서 강력한 이미지 시각화, 처리 및 인쇄 기능을 제공합니다
  
  Keep Reading
업그레이드 키트 +

Automation & Software - Sources - Airlock - Specimen Chamber

Automation & Software

PC-Automation (Wf/SCU)
PC-Automation system to replace SUN system, allows full automation & unattended operation and greatly improves ease of use.
Please note that most of the upgrade kits listed below can only be installed on IMS Wf and SC Ultra instruments equipped with PC-Automation.

Post-treatment (Wf/SCU)
PC station for off-line data treatement (CAMECA software not included).

Desk control duplication (Wf/SCU)
Additional PC, keyboard, CAMECA keypad, screens... ensuring optimized operation comfort when the lab is split in two parts.

WinCurve software (Wf/SCU)
Offers powerful SIMS data processing & graphing capabilities together with easy report creation functionalities.

WinImage Software (Wf/SCU)
Offers powerful SIMS image processing functions, available in Standard or Extended version.

Remote monitoring (Wf/SCU)
Real Time Display software licence providing remote access to all instrumental parameters, thus allowing the operator to remotely tune and run the instrument from his/her own PC.

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Sources

Low energy cesium ion source (Wf/SCU)
With this new high brightness cesium ion source, the IMS Wf/SCU can now perform Extremely Low Impact Depth Profiling and analyse ultra thin layers with nanometer depth resolution.

High brightness RF plasma oxygen ion source (Wf/SCU)
Compared to conventional DUO-plasmatron, the RF plasma source allows substantial performance improvements using ultra low energy O2 primary beam.

Specimen Chamber

Motorized Z-movement stage (Wf/SCU)
Replaces the piezo-stage movement

Turbo Detection (Wf/SCU)
Turbomolecular pump to replace the existing ionic pump. Improves vacuum in the detection system.

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